Single-photon avalanche diode structure and silicon photomultiplier

• 1. 单光子雪崩二极管及单光子雪崩二极管阵列 [P] . 中国专利： CN114038865A . 2022-02-11
• 2. 单光子雪崩二极管及其制作方法、单光子雪崩二极管阵列 [P] . 中国专利： CN113690337A . 2021-11-23
• 3. SEMICONDUCTOR DEVICES WITH SINGLE-PHOTON AVALANCHE DIODES, LIGHT SCATTERING STRUCTURES, AND MULTIPLE ISOLATION STRUCTURES [P] . US2021175265A1 . 2021-06-10

  机译： 具有单光子雪崩二极管，光散射结构和多个隔离结构的半导体器件

• 4. SEMICONDUCTOR DEVICES WITH SINGLE-PHOTON AVALANCHE DIODES AND LIGHT SCATTERING STRUCTURES [P] . US2021175272A1 . 2021-06-10

  机译： 具有单光子雪崩二极管和光散射结构的半导体器件

• 5. SEMICONDUCTOR DEVICES WITH SINGLE-PHOTON AVALANCHE DIODES AND HYBRID ISOLATION STRUCTURES [P] . US2021175380A1 . 2021-06-10

  机译： 具有单光子雪崩二极管和混合隔离结构的半导体器件

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