首页> 外国专利> MASK SUBSTRATE, PHOTOMASK, EXPOSURE METHOD, DEVICE MANUFACTURING METHOD, MANUFACTURING METHOD OF MASK SUBSTRATE, MANUFACTURING METHOD OF PHOTOMASK, AND MANUFACTURING SYSTEM

MASK SUBSTRATE, PHOTOMASK, EXPOSURE METHOD, DEVICE MANUFACTURING METHOD, MANUFACTURING METHOD OF MASK SUBSTRATE, MANUFACTURING METHOD OF PHOTOMASK, AND MANUFACTURING SYSTEM

机译:掩膜基质,光掩膜,曝光方法,设备制造方法,掩膜基质的制造方法,光掩膜的制造方法以及制造系统

摘要

PROBLEM TO BE SOLVED: To provide a mask substrate that can suppress exposure failure arising from thermal deformation of a photomask by irradiation of exposure light.;SOLUTION: The mask substrate comprises: a first member 101 on which a mask pattern is formed; and a second member 102 that is joined to at least a part of the first member and is different in a coefficient of thermal expansion from the first member. The first member 101 contains silicon dioxide(SiO2). In an embodiment, the first member 101 contains quartz glass. In the embodiment, the first member 101 contains quartz glass as a main component. The first member 101 may contain silicon dioxide and a substance different from silicon dioxide. The second member 102 has the coefficient of thermal expansion larger than that of the first member 101. In the embodiment, the second member 102 contains calcium fluoride(CaF2). In the embodiment, the second member 102 contains fluorite. In the embodiment, the second member 102 contains calcium fluoride as a main component.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:提供一种掩模基板,该掩模基板能够抑制由于曝光光的照射而导致的光掩模的热变形引起的曝光不良。第二部件102与第一部件的至少一部分接合,并且热膨胀系数与第一部件不同。第一构件101包含二氧化硅(SiO 2)。在一个实施例中,第一构件101包含石英玻璃。在该实施例中,第一构件101包含石英玻璃作为主要成分。第一构件101可以包含二氧化硅和不同于二氧化硅的物质。第二构件102的热膨胀系数大于第一构件101的热膨胀系数。在实施例中,第二构件102包含氟化钙(CaF 2)。在该实施例中,第二构件102包含萤石。在该实施例中,第二构件102包含氟化钙作为主要成分。版权所有:(C)2013,JPO&INPIT

著录项

  • 公开/公告号JP2013127559A

    专利类型

  • 公开/公告日2013-06-27

    原文格式PDF

  • 申请/专利权人 NIKON CORP;

    申请/专利号JP20110277115

  • 发明设计人 NAGASAKA HIROYUKI;

    申请日2011-12-19

  • 分类号G03F1/60;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-21 17:02:37

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