METHOD FOR DEPOSITING TiSiN FILM AND STORAGE MEDIUM

摘要

PROBLEM TO BE SOLVED: To deposit a TiSiN film having stable specific resistance irrespective of film thickness.;SOLUTION: A substrate to be treated is carried into a treatment container, and the inside of the treatment container is held in a decompression state. The substrate to be treated is heated, and a TiSiN unit film is formed on a Si-containing part of the substrate to be treated by an operation including (1) a step of supplying a Ti-containing gas or a step of supplying a Ti-containing gas and a nitriding gas, (2) a step of supplying a nitriding gas, and (3) a step of supplying a Si-containing gas containing Cl. When the operation is performed a plurality of times to deposit a TiSiN film having a predetermined film thickness, the step of supplying a Ti-containing gas and a nitriding gas is performed at the beginning of film deposition or the step of supplying a Ti-containing gas and the step of supplying a nitriding gas is performed at the beginning of film deposition, thus forming a TiN film in the state of a continuous film.;COPYRIGHT: (C)2013,JPO&INPIT