MEMORY DEVICE BASED ON CONDUCTANCE WHICH SWITCHES IN POLYMER/ELECTROLYTE JUNCTIONS

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile memory with flexibility, reduced power consumption, a high write/erase speed, a long cycle life, and low manufacturing costs.;SOLUTION: A non-volatile memory device includes at least a first electrode R1 and a second electrode R2 provided on a substrate, the first and second electrodes being separated from each other; an organic semiconductive polymer electrically connecting the first electrode R1 and the second electrode R2; an electrolyte in contact with the organic semiconductive polymer; and a third electrode that is not in contact with the first electrode R1, the second electrode R2, or the organic semiconductive polymer. The organic semiconductive polymer has a first redox state in which it exhibits a first conductivity, and a second redox state in which it exhibits a second conductivity.;COPYRIGHT: (C)2013,JPO&INPIT