Confronting the suffering

摘要

PROBLEM TO BE SOLVED: To provide a plasma etching method capable of making compatible a control of an etching shape and a restraint of a residue when a lower layer resist film of a three layer resist is dry-developed by using a plasma of an O₂ based etching gas.;SOLUTION: The plasma etching method includes a step in which a mixture gas containing a carbon compound gas having a carbon atom in a molecule and an O₂ gas is used as the etching gas in the processor of a plasma etching apparatus 1, a flow rate of the carbon compound gas to a total gas flow rate is set to 40-99%, and an upper layer organic based material film and an intermediate layer are used as a mask to etch a lower layer organic based material film, whereby a pattern of the intermediate layer is transferred to the lower layer organic based material film.;COPYRIGHT: (C)2008,JPO&INPIT