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Inorganic anion exchanger using bismuth compound and resin composition for encapsulating electronic parts using the same
Inorganic anion exchanger using bismuth compound and resin composition for encapsulating electronic parts using the same
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机译:使用铋化合物的无机阴离子交换剂和使用该无机阴离子交换剂的用于封装电子部件的树脂组合物
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摘要
A bismuth compound, useful as an inorganic anion exchanger used for an encapsulating material for, e.g., semiconductors, has a peak intensity of 900 to 2000 cps at 2=27.9° to 28.1° and a peak intensity of 100 to 800 cps at 2=8.45° to 8.55° in a powder X-ray diffraction pattern, and is represented by the following formula (1): Bi(OH)x(NO3)y.nH2O(1) wherein x is a positive number not less than 2.5 and less than 3, y is a positive number not more than 0.5, x+y=3, and n is 0 or a positive number.
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