Production manner of the negative resistance element, production manner of the single electronic tunnel component, production manner of the photosensor and the multiple nano dots which

摘要

PROBLEM TO BE SOLVED: To provide a negative resistance element and its manufacturing method which is manufactured by a simple process at a low cost with a high substrate selectivity, operable at a higher temperature than room temperature, and strong against the noise.;SOLUTION: A tunnel negative resistance element having a MOSFET structure is composed by forming a gate insulation film 12 on a substrate 11, forming thereon a multiple nanodot structure 13 composed of a plurality of nano-dots 13a which are made of an oxide semiconductor such as ZnO, etc. and mutually bonded through a double Schottky barrier 13b in one plane, and forming a source electrode 14 and a drain electrode 15 thereon. The nanodot 13a has a diameter of ≤60 nm or ≤20 nm. The tunnel negative resistance element is used for a single-electron transistor, a single-electron pump, a single-electron memory, etc.;COPYRIGHT: (C)2008,JPO&INPIT