Ferroelectric domain inversion method

摘要

The present invention relates to a method of achieving domain reversal in planned (LiNbO ₃ substrate doped with MgO, for example) a single domain ferroelectric substrate and controlled nucleation. The method includes polling the first substrate comprising the basis to form (nucleation ie) domain inverted shallow electrode patterns under the corona discharge method, an electrode pattern defined, and subsequent deep uniform domain poll to achieve reversal of the second crystal on the basis of electrostatic methods. Another object of the present invention is to provide a method for achieving a broadband light source using a non-linear crystal having a periodic domain inversion structure.