High quality silicon single crystal ingot production method, ingots produced from the device and the method and growth apparatus, wafer

摘要

PROBLEM TO BE SOLVED: To provide a method for growing a silicon single crystal ingot by a Czochralski method, by which a high quality silicon single crystal ingot can be produced with high productivity.;SOLUTION: The silicon single crystal ingot having a desired oxygen concentration and suppressed in defects is produced by independently controlling the temperature distribution and the oxygen concentration distribution of a silicon melt by applying an unbalanced magnetic field to the silicon melt so that the magnetic field intensity of an oxygen gushing region is different from that of a solid-liquid interface region.;COPYRIGHT: (C)2007,JPO&INPIT