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Semiconductor failure analysis equipment, failure analysis method, and failure analysis program

机译:半导体故障分析设备,故障分析方法和故障分析程序

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor defect analyzing apparatus which can reliably and efficiently analyze a defect in a semiconductor device using a defect observation image, a defect analyzing method, and a defect analyzing program therefore.;SOLUTION: A defect analyzing apparatus 10 comprises an inspection information acquirer 11 for acquiring a defect observation image P2 in a semiconductor device, a layout information acquirer 12 for acquiring layout information, and a defect analyzer 13 for analyzing a defect. The defect analyzer 13 refers to the defect observation image, sets an analysis region in response to reaction information of the defect observation image, extracts one of a plurality of wiring lines passed through the analysis region included in the layout of the semiconductor device as a defect wiring line candidate at the same time refers to distance between the other wiring lines of the plurality of wiring lines and the wiring line candidate, and acquires proximity wiring line information for the wiring line candidate.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:提供一种能够使用缺陷观察图像可靠且有效地分析半导体器件中的缺陷的半导体缺陷分析设备,缺陷分析方法及其缺陷分析程序。解决方案:缺陷分析设备10包括:检查信息获取器11,用于获取半导体器件中的缺陷观察图像P2;布局信息获取器12,用于获取布局信息;以及缺陷分析器13,用于分析缺陷。缺陷分析器13参考缺陷观察图像,响应于缺陷观察图像的反应信息来设置分析区域,提取经过半导体器件的布局中包括的分析区域的多条布线之一作为缺陷。同时候选布线是指多条布线中的其他布线与候选布线之间的距离,并获取候选布线的邻近布线信息。版权所有:(C)2009,JPO&INPIT

著录项

  • 公开/公告号JP5155602B2

    专利类型

  • 公开/公告日2013-03-06

    原文格式PDF

  • 申请/专利权人 浜松ホトニクス株式会社;

    申请/专利号JP20070162972

  • 发明设计人 堀田 和宏;寺田 浩敏;

    申请日2007-06-20

  • 分类号H01L21/66;G01N21/956;

  • 国家 JP

  • 入库时间 2022-08-21 16:53:35

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