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BI-DIRECTIONAL BACK-TO-BACK STACKED SCR FOR HIGH-VOLTAGE PIN ESD PROTECTION, METHODS OF MANUFACTURE AND DESIGN STRUCTURES
BI-DIRECTIONAL BACK-TO-BACK STACKED SCR FOR HIGH-VOLTAGE PIN ESD PROTECTION, METHODS OF MANUFACTURE AND DESIGN STRUCTURES
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机译:用于高压销ESD保护的双向背对背层叠式SCR,制造方法和设计结构
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摘要
Bi-directional back-to-back stacked SCRs for high-voltage pin ESD protection, methods of manufacture and design structures are provided. The device includes a symmetrical bi-directional back-to-back stacked silicon controlled rectifier (SCR). An anode of a first of the back-to-back stacked SCR is connected to an input. An anode of a second of the back-to-back stacked SCR is connected to ground. Cathodes of the first and second of the back-to-back stacked SCR are connected together. Each of the symmetrical bi-directional back-to-back SCRs include a pair of diodes directing current towards the cathodes which, upon application of a voltage, become reverse biased effectively and deactivating elements from one of the symmetrical bi-directional back-to-back SCRs while the diodes of another of the symmetrical bi-directional back-to-back SCRs direct current in the same direction as the reverse biased diodes.
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