Novel Very Fast Optic Nonvolatile Memory with Alternative Carrier Lifetimes and Bandgap Energies, Optic Random Access, and Mirrored 'Fly-back' Configurations

摘要

The present invention is for a fast optic nonvolatile memory cell (FONM) that operates with a speed 1000000 times faster than the commercially available FLASH memory. The information (or charges) can be entered into the FONM cell by switching on a built-in laser or LED (Light Emitting Diode). Excited by the lights, and driven by electric fields, the regions of low carrier lifetimes thermally generate excess electrons or positive charges to fill the storage gaps or interfaces. To detect the stored information, two BJTs (Bipolar Junction Transistors) are arranged in a mirrored configuration—with alternative regions of high or low carrier lifetimes and bandgap energies. By comparing the BJT “fly-back” characteristics a voltage difference can be detected as a signal of whether the information is stored or not stored.