APPARATUS FOR FORMING MEMORY LINES AND VIAS IN THREE DIMENSIONAL MEMORY ARRAYS USING DUAL DAMASCENE PROCESS AND IMPRINT LITHOGRAPHY

摘要

A memory layer in a three-dimensional memory array is provided. The memory layer includes a plurality of memory lines and vias formed by a damascene process using an imprint lithography template having a plurality of depths, wherein at least one depth corresponds to the memory lines and wherein at least one depth corresponds to the vias, and a plurality of memory cells operatively coupled to the memory lines. Numerous other aspects are disclosed.