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Piezoelectric thin film element and piezoelectric thin film device using a piezoelectric thin film of alkali-niobium oxide series
Piezoelectric thin film element and piezoelectric thin film device using a piezoelectric thin film of alkali-niobium oxide series
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机译：压电薄膜元件和使用碱金属铌氧化物系列的压电薄膜的压电薄膜装置
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摘要
To provide a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1-xNax)yNbO3, wherein the composition ratio x of the piezoelectric thin film expressed by (K1-xNax)yNbO3 is in a range of 0.4≦x≦0.7, and a half width of a rocking curve of (001) plane by X-ray diffraction measurement is in a range of 0.5° or more and 2.5° or less.
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机译：为了在基板上提供压电薄膜，该压电薄膜具有由组成式（K 1-x Na x ）表示的基于碱金属铌氧化物的钙钛矿结构y NbO 3 ，其中压电薄膜的组成比x由（K 1-x Na x ）< Sub> y NbO 3 在0.4≤x≤0.7的范围内，并且通过X射线衍射测量的（001）面的摇摆曲线的半峰宽度在该范围内大于等于0.5°且小于等于2.5°。
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