首页> 外国专利> VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS

VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS

机译:垂直腔面发射激光器,垂直腔面发射激光器设备,光传输设备和信息处理设备

摘要

A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed from the second semiconductor multilayer reflector to the first semiconductor multilayer reflector; a current narrowing layer formed inside of the columnar structure and having a conductive region surrounded by an oxidization region; a first electrode formed at a top of the columnar structure, electrically connected to the second semiconductor multilayer reflector and defining a beam window; a first insulating film comprised of a material with a first refractive index and formed on the first electrode to cover the beam window; and a second insulating film comprised of a material with a second refractive index and formed on the first insulating film, of which a radius is smaller than a radius of the conductive region.
机译:垂直腔表面发射激光器,包括:基板;第一半导体多层反射器;活动区域;第二半导体多层反射器;从第二半导体多层反射器到第一半导体多层反射器形成的柱状结构。电流狭窄层形成在柱状结构的内部并且具有被氧化区域围绕的导电区域;第一电极形成在柱状结构的顶部,电连接到第二半导体多层反射器并限定束窗口;第一绝缘膜,其由具有第一折射率的材料形成并形成在第一电极上以覆盖电子束窗口;第二绝缘膜,其由具有第二折射率的材料形成并形成在第一绝缘膜上,该第二绝缘膜的半径小于导电区域的半径。

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