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Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography
Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography
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机译:用于基于模型的散射条放置以增强四分之一波长光刻中的聚焦深度的方法,程序产品和设备
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摘要
A method of generating a mask having optical proximity correction features. The method includes the steps of: (a) obtaining a desired target pattern having features to be imaged on a substrate; (b) determining a first focus setting to be utilized when imaging the mask; (c) determining a first interference map based on the target pattern and the first focus setting; (d) determining a first seeding site representing the optimal placement of an assist feature within the mask relative to a feature to be imaged on the basis of the first interference map; (e) selecting a second focus setting which represents a predefined amount of defocus relative to the first focus setting; (f) determining a second interference map based on the target pattern and the second focus setting; (g) determining a second seeding site representing the optimal placement of an assist feature within the mask relative to the feature to be imaged on the basis of the second interference map; and (h) generating an assist feature having a shape which encompasses both the first seeding site and the second seeding site.
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