Photomask throughput by reducing exposure shot count for non-critical elements

摘要

A solution for improving photomask fabrication time and yield, through the reduction in the number of exposure shots used for a given photomask pattern to be written on the photomask. In one embodiment, non-critical elements can be configured into a shape that the write tool can write with less exposure shots, while maintaining the original intent of the non-critical element. In another embodiment, the pattern of non-critical elements can be configured such that the non-critical elements are aligned with the grid lines of the operational grid of the write tool to further reduce shot count. In another embodiment, the manufacturing parameters and placement of non-critical elements can be modifying, e.g., by identifying which elements are critical and which are non-critical, and then printing non-critical elements with a first exposure parameter (e.g. a single pass exposure) while critical elements are printed with a second exposure parameter (e.g., a multi pass exposure).