Process for growing single crystals of Copper (I) PENTAthiophosphate (V) iodide Cu6PS5I by technique of directional crystallization from the melt

摘要

A process for growing single crystals of copper (I) pentathiophosphate (V) iodide CuPSI by technique of directional crystallization from the melt includes stage heating the evacuated quartz ampoules containing initial components copper, phosphorus, sulfur, and also pre-synthesized CuI in the desired stoichiometric ratio. Heating is carried out to a maximum temperature and the melt is maintained at this temperature for 24 h. with following growing single crystals. The maximum temperature of the synthesis is 1350 K. The growing is carried out with the growing rate of 3 mm/day in ampoules with the tapered end.