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Array of microcavity plasma devices with microcavities having curved sidewalls and method of forming such array

机译:具有具有弯曲的侧壁的微腔的微腔等离子体装置的阵列及其形成方法

摘要

An embodiment of the invention IS an array of microcavity plasma devices The array includes a first metal film electrode with a plurality of non-uniform cross-section microcavities therein that are encapsulated in oxide A second electrode is a thin metal foil encapsulated in oxide that is bonded to the first electrode A packaging layer contains gas or vapor in the non-uniform cross-section microcavities To make such device, photoresist is patterned to encapsulate the anodized foil or film except on a top surface at desired positions of microcavities A second anodization or electrochemical etching is conducted to form the non-uniform cross-section sidewall microcavities cavities After removing photoresist and metal oxide, a final anodization lines the walls of the microcavities with metal oxide and fully encapsulates the metal electrodes with metal oxide
机译:本发明的一个实施方案是微腔等离子体装置的阵列。该阵列包括第一金属膜电极,所述第一金属膜电极具有封装在氧化物中的多个不均匀横截面的微腔,第二电极是封装在氧化物中的薄金属箔。键合到第一电极上。包装层的横截面不均匀,其中包含气体或蒸汽。为了制造此类器件,对光致抗蚀剂进行构图,以将阳极氧化的箔或膜封装在微腔所需位置的顶面上(第二表面除外)。进行电化学蚀刻以形成横截面不均匀的侧壁微腔腔。去除光致抗蚀剂和金属氧化物后,最终的阳极氧化工艺将微腔壁用金属氧化物衬里,并用金属氧化物完全包裹金属电极

著录项

  • 公开/公告号EP2203940B1

    专利类型

  • 公开/公告日2013-04-03

    原文格式PDF

  • 申请/专利权人 UNIV ILLINOIS;

    申请/专利号EP20080841926

  • 申请日2008-10-27

  • 分类号H01J61/82;H01J11/18;H01J9/24;C25D11/12;C25D11/26;

  • 国家 EP

  • 入库时间 2022-08-21 16:34:10

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