BAND STRUCTURE ENGINEERING FOR IMPROVED EFFICIENCY OF CDTE BASED PHOTOVOLTAICS

摘要

Disclosed is a solar cell or component thereof that includes a p-type thin film solar light absorbing layer having one or more compositions of group II-VI alloys described as CdTe_xM_1-x where M is S, Se or O. An n-type thin-film transparent window layer comprising CdS is provided adjacent to the CdTe_xM_1-x p-type thin film solar light absorbing layer such that a p-n junction formed between the layers.