P-TYPE OXIDE ALLOYS BASED ON COPPER OXIDES, TIN OXIDES, TIN-COPPER ALLOY OXIDES AND METAL ALLOY THEREOF, AND NICKEL OXIDE, WITH EMBEDDED METALS THEREOF, FABRICATION PROCESS AND USE THEREOF

摘要

The present invention relates to thin films comprising non-stoichiometric monoxides of: copper (OCu2)x with embedded cubic metal copper (Cucy) [(OCu2)x+(Cu1-2)y, wherein 0.05x1 and 0.01y0.9]; of tin (OSn)x with embedded metal tin (Snx) [(OSn)z+(Sn1-2)w wherein 0.05z1 and 0.01w0.9]; CucxSnx alloys with embedded metal Sn and Cu [(OCuSn)a+(CuSn)b with 02 and 02, wherein 0.05a1 and 0.01b0.9]; and of nickel (ONi)x with embedded Ni and Sn species [(ONi)a+(NiSn)b with 02 and 02, wherein 0.05a1 and 0.01b0.9]; or combinations thereof, with amorphous, or nanocrystalline, or polycrystalline structure, either doped or not, with impurities such as zirconium, nitrogen or fluorine, for the fabrication of CMOS or TFT devices, with active matrices for LCD or OLED, fabrication of logic circuits, among others, using rigid or flexible substrates, wherein a protection layer, such as SU8 or the like, or silicon oxide or silicon nitride films are used for encapsulation.