首页> 外国专利> METHOD FOR MANUFACTURING POLYSILICON AND METHOD FOR MANUFACTURING SILICON TETRACHLORIDE

METHOD FOR MANUFACTURING POLYSILICON AND METHOD FOR MANUFACTURING SILICON TETRACHLORIDE

机译:多晶硅的制造方法及四氯化硅的制造方法

摘要

A process for production of polysilicon and silicon tetrachloride is provided in which a raw material that is supplied stably and is available at low cost can be used, chlorination reaction can be smoothly promoted, impurities generated after chlorination reaction can be controlled, and production efficiency is superior in a polysilicon producing step. The process includes a step of chlorination in which a granulated body consisting of silicon dioxide and carbon-containing material is chlorinated to generate silicon tetrachloride, a step of reduction in which silicon tetrachloride is reduced by a reducing metal to generate polysilicon, and a step of electrolysis in which chloride of the reducing metal by-produced in the reduction step is molten salt-electrolyzed to generate the reducing metal and chlorine gas. In the process, chlorine gas is supplied to the silicon dioxide and the carbon-containing material in the presence of oxygen gas, and these are reacted in the chlorination step, the reducing metal generated in the electrolysis step is reused in the reduction step as a reducing agent of silicon tetrachloride, and the chlorine gas generated in the electrolysis step is reused in the chlorination step.
机译:本发明提供一种多晶硅和四氯化硅的制造方法,其中可以使用稳定地供给且廉价的原料,可以顺利地促进氯化反应,可以控制氯化反应后产生的杂质,可以提高生产效率。在多晶硅生产步骤中表现优异。该方法包括氯化步骤,其中将由二氧化硅和含碳材料组成的粒状体氯化,以生成四氯化硅;还原步骤,其中通过还原金属将四氯化硅还原以生成多晶硅;以及电解,其中将在还原步骤中副产物的氯化物的氯化物熔融盐电解,以生成还原金属和氯气。在该方法中,在氧气存在下将氯气供应到二氧化硅和含碳材料,并使它们在氯化步骤中反应,在电解步骤中生成的还原金属在还原步骤中重新用作四氯化硅的还原剂,电解步骤中产生的氯气在氯化步骤中再利用。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号