首页>
外国专利>
ELECTRODE STRUCTURE FOR CAPACITIVE-COUPLED PLASMA WHICH USES ONLY ONE SOURCE INSTEAD OF SEVERAL SOURCES IN ORDER TO SECURE A LARGE AREA PLASMA SOURCE AND A SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME
ELECTRODE STRUCTURE FOR CAPACITIVE-COUPLED PLASMA WHICH USES ONLY ONE SOURCE INSTEAD OF SEVERAL SOURCES IN ORDER TO SECURE A LARGE AREA PLASMA SOURCE AND A SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME
PURPOSE: An electrode structure for capacitive-coupled plasma and a substrate processing apparatus including the same are provided to improve regularity of capacitive-coupled plasma of a rectangular electrode.;CONSTITUTION: A substrate processing apparatus includes a vacuum tank(120), a substrate holder(202), and a rectangular electrode(210). The vacuum tank includes an exhausting unit in a rectangular container shape. The substrate holder is arranged inside of the vacuum tank. The rectangular electrode includes at least four trenches(211), is supplied with electricity from a RF power source(206) through an impedance matching network(208), and forms capacitive-coupled plasma inside of the vacuum tank. The trenches have a fixed inner radius or outer radius and are separated from each other in the diagonal direction of the rectangular electrode.;COPYRIGHT KIPO 2013
展开▼