首页> 外国专利> ELECTRODE STRUCTURE FOR CAPACITIVE-COUPLED PLASMA WHICH USES ONLY ONE SOURCE INSTEAD OF SEVERAL SOURCES IN ORDER TO SECURE A LARGE AREA PLASMA SOURCE AND A SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME

ELECTRODE STRUCTURE FOR CAPACITIVE-COUPLED PLASMA WHICH USES ONLY ONE SOURCE INSTEAD OF SEVERAL SOURCES IN ORDER TO SECURE A LARGE AREA PLASMA SOURCE AND A SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME

机译:电容耦合等离子体的电极结构,为了确保大面积等离子体源和基质处理设备(包括相同的来源),仅使用一种源代替几种源

摘要

PURPOSE: An electrode structure for capacitive-coupled plasma and a substrate processing apparatus including the same are provided to improve regularity of capacitive-coupled plasma of a rectangular electrode.;CONSTITUTION: A substrate processing apparatus includes a vacuum tank(120), a substrate holder(202), and a rectangular electrode(210). The vacuum tank includes an exhausting unit in a rectangular container shape. The substrate holder is arranged inside of the vacuum tank. The rectangular electrode includes at least four trenches(211), is supplied with electricity from a RF power source(206) through an impedance matching network(208), and forms capacitive-coupled plasma inside of the vacuum tank. The trenches have a fixed inner radius or outer radius and are separated from each other in the diagonal direction of the rectangular electrode.;COPYRIGHT KIPO 2013
机译:目的:提供一种用于电容耦合等离子体的电极结构和包括该电极结构的基板处理设备,以改善矩形电极的电容耦合等离子体的规则性。;组成:一种基板处理设备,包括真空罐(120),基板支架(202)和矩形电极(210)。真空箱包括呈矩形容器形状的排气单元。基板支架布置在真空罐的内部。矩形电极包括至少四个沟槽(211),通过阻抗匹配网络(208)从RF电源(206)供电,并在真空罐内部形成电容耦合等离子体。沟槽具有固定的内半径或外半径,并且在矩形电极的对角线方向上彼此分开。; COPYRIGHT KIPO 2013

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