METHOD OF FORMING A THROUGH-SILICON VIA BY USING LASER ABLATION, WHICH IS CAPABLE OF REPLACING A CONVENTIONAL DRY ETCHING PROCESS

摘要

PURPOSE: A method of forming a through-silicon via by using laser ablation is provided to form a long groove firstly and form a through-hole by using a grinding process secondly, thereby simplifying a process of forming the through-silicon via.;CONSTITUTION: A method of forming through-silicon vias by using laser ablation comprises the steps of: preparing a silicon wafer (210); laser drilling to form a plurality of grooves (220) by irradiating a laser beam (L) onto a first surface (211) of the silicon wafer; and grinding a second surface (212) of the silicon wafer to form a plurality of through-silicon vias by exposing the grooves on the second surface of the silicon wafer. The step of laser drilling comprises using an ultrashort pulse laser (230). In the step of grinding, an upper surface of the silicon wafer is ground.;COPYRIGHT KIPO 2013