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HIGHLY STRETCHABLE MATERIAL WHICH IS BEYOND THE INTRINSIC LIMITS USING A THREE-DIMENSIONAL NANOSTRUCTURE CAPABLE OF APPLYING A HIGH STRETCHABLE FUNCTION TO A CONDUCTIVE ELECTRONIC MATERIAL OR A MAGNETIC ELECTRONIC MATERIAL, AND A PRODUCTION METHOD THEREOF
HIGHLY STRETCHABLE MATERIAL WHICH IS BEYOND THE INTRINSIC LIMITS USING A THREE-DIMENSIONAL NANOSTRUCTURE CAPABLE OF APPLYING A HIGH STRETCHABLE FUNCTION TO A CONDUCTIVE ELECTRONIC MATERIAL OR A MAGNETIC ELECTRONIC MATERIAL, AND A PRODUCTION METHOD THEREOF
PURPOSE: A highly stretchable material is provided to offer high elasticity greater than the stretch limit of a polymer bulk material by a stress distributing effect using a 3D porous nanostructure pattern.;CONSTITUTION: Nanosized pores are partially or three-dimensionally connected to a polymer material with a 3D porous nanostructure to form a channel. The nanosized pores have regular or irregular form toward each axial direction. The nanosized pores and the polymer material with the 3D porous nanostructure forms a 3D porous nanostructure pattern. The polymer material has the high elasticity which is greater than the stretch limit of a polymer bulk material. The polymer material has one property selected from a conductive material, a magnetic material, or a semiconductor.;COPYRIGHT KIPO 2013
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