ENHANCED RESURF HVPMOS DEVICE WITH STACKED HETERO-DOPING RIM AND GRADUAL DRIFT REGION

摘要

The first polar form of the HV-well formed in the second polarity type epitaxial layer (22) (26 ) on the HV PMOS (12) is formed on the substrate board 20 having, and at least some of HV wells over a pair of field oxide region (32, 34) comprises a. Insulated gate (40, 42) are formed on the substrate between the field oxide region. Stacked hetero-doped rims in the (50, 52, 60, 62) is HV-well, and its external edge of the gate-is formed by alignment. Between the buffer area of the first polarity type 66 HV well, and the interior edge of the gate itself - is formed of a sort. Drift region (68) of the second polarity type is between the buffer area, and its internal edge of the gate-forming in alignment. Drift region comprises a region having a gradual dopant concentration change (104), and a drain region 110 of the second polarity type.