首页> 外国专利> ETCHING SOLUTION FOR EXPOSURE OF AUSTENITE GRAIN SIZE AND METHOD FOR EXPOSURE OF AUSTENITE GRAIN SIZE USING THEREOF

ETCHING SOLUTION FOR EXPOSURE OF AUSTENITE GRAIN SIZE AND METHOD FOR EXPOSURE OF AUSTENITE GRAIN SIZE USING THEREOF

机译:奥氏体晶粒尺寸曝光的蚀刻溶液及使​​用其的奥氏体晶粒尺寸曝光的方法

摘要

PURPOSE: An etching solution for observation of austenite grains and a method for etching a specimen using the same are provided to prevent damage to grains due to initial rapid etching by implementing etching in two stages. CONSTITUTION: A method for etching a specimen for observation of austenite grains comprises the steps of: dipping a specimen in a first etching solution, which comprises picric acid-saturated aqueous solution of 57.5-61.9vol.%, copper chloride of 0.1-0.5vol.%, and wetting agent of 38-42vol.%, to remove foreign materials from the surface of the specimen, adding hydrochloric acid of 0.01-0.05vol.% to the first etching solution of 100wt.% to obtain a second etching solution, dipping the specimen in the second etching solution, proceeding an etching process until an etching film is covered on the entire surface of the specimen from the second etching solution, and washing to remove the etching film from the specimen.
机译:目的:提供一种用于观察奥氏体晶粒的蚀刻溶液以及使用该溶液的方法,以通过在两个阶段实施蚀刻来防止由于初始快速蚀刻而导致的晶粒损坏。组成:一种用于蚀刻样品以观察奥氏体晶粒的方法,包括以下步骤:将样品浸入第一蚀刻溶液中,该溶液包括57.5-61.9vol%的苦味酸饱和水溶液,0.1-0.5vol%的氯化铜%和38-42vol。%的润湿剂,以从样品表面去除异物,向100wt。%的第一蚀刻溶液中添加0.01-0.05vol。%的盐酸以获得第二蚀刻溶液,将样品浸入第二蚀刻溶液中,进行蚀刻工艺直到第二蚀刻溶液将蚀刻膜覆盖在样品的整个表面上,然后进行清洗以从样品中去除蚀刻膜。

著录项

  • 公开/公告号KR101257178B1

    专利类型

  • 公开/公告日2013-04-22

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20110016564

  • 发明设计人 박경현;

    申请日2011-02-24

  • 分类号C23F1/28;G01N33/20;G01N17;

  • 国家 KR

  • 入库时间 2022-08-21 16:25:18

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号