Preparing beta-silicon carbide useful e.g. as substrate for catalyst, high technology ceramics, and as semiconductors, comprises providing plant material, and thermally reacting plant material in absence of oxygen at specific temperature

摘要

Preparing beta -silicon carbide, comprises (a) providing plant material, and (b) thermally reacting the plant material in the absence of oxygen at a temperature of 1200-less than 1450[deg] C. An independent claim is also included for the beta -silicon carbide exhibiting a specific surface area of at least 350 m 2/g, preferably at least 450 m 2/g.