LED-light source, has covering layer comprising particles e.g. glass spheres, embedded in silicone, where difference of respective indexes of material and particles of covering layer amounts to specific value

摘要

The source (10) has a luminescence conversion layer (6) following a radiation-emitting active layer (3) of an LED chip (1) in a beam direction (11). A covering layer (7) has particles (9) e.g. glass balls and silicon dioxide, embedded in a base material (8) i.e. silicone. The material exhibits refraction indexes at room and operating temperatures. The particles exhibit refraction indexes at the temperatures, where difference of indexes of the material and the particles is greater than/equal to 0.02 und difference of other indexes of the material and the particles is less than/equal to 0.01. The temperatures lie between 80 degree Celsius and 100 degree Celsius. The room temperature is environment temperature. The active layer is designed as a PN junction, a double heterostructure, a single quantum well structure and multiple quantum well structure. The LED chip is designed as a substrateless thin film chip and an organic LED-chip.