Preparing silicon ingots by solidifying a silicon melt, by providing a container for receiving a silicon melt, where the container comprises a bottom wall and a side wall, and arranging planar germ defaults on bottom wall of the container

摘要

The method comprises providing a container for receiving a silicon melt, where the container comprises a bottom wall (2) and a side wall (3), arranging planar germ defaults (4) on the bottom wall of the container, where: the germ defaults have a side surface (6) and a crystal structure with a predetermined axial orientation; and side surfaces of the two neighboring germ defaults are separated from each other by a gap, arranging liquid silicon on the germ defaults, closing the gap between the germ defaults by a crystal growth, and directly solidifying the silicon melt in the container. The method comprises providing a container for receiving a silicon melt, where the container comprises a bottom wall (2) and a side wall (3), arranging planar germ defaults (4) on the bottom wall of the container, where: the germ defaults have a side surface (6) and a crystal structure with a predetermined axial orientation; and side surfaces of the two neighboring germ defaults are separated from each other by a gap, arranging liquid silicon on the germ defaults, closing the gap between the germ defaults by a crystal growth, and directly solidifying the silicon melt in the container. The germ defaults comprise a predetermined lateral orientation as axial orientation consisting of (100)-orientation and (110)-orientation. The germ defaults are arranged/located on the bottom wall of the container such that the germ defaults have a predetermined grain boundary configuration. The germ defaults comprise a crystal lattice with unit cells of a volume (VG), and the grain boundary configuration is selected in such a way that an unit cell of a coincidence lattice of two neighboring germ defaults has a volume (VK), where VK:VG is = 33. The silicon is arranged in the container in such a way that the gap between two neighboring germ defaults is 90% free from fixed silicon after arranging the silicon in the container and before solidifying the silicon melt. The gap has a breadth (B) and a depth (T), where T:B is = 2. The gap between two germ defaults is provided in a region of a subsequent saw line. An independent claim is included for a silicon ingot.