By the formation of solid materials iii nitride on the matrix of growth of the nitride layers of metal and formed by these structures.

摘要

Bulk III-nitride semiconductor materials are deposited in an HPVE process using a metal trichloride precursor on a metal nitride template layer of a growth substrate. Deposition of the bulk III-nitride semiconductor material may be performed without ex situ formation of the template layer using a MOCVD process. In some embodiments, a nucleation template layer is formed ex situ using a non-MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In additional embodiments, a nucleation template layer is formed in situ using an MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In further embodiments, a nucleation template layer is formed in situ using an HVPE process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process.