首页> 外国专利> PRODUCTION METHOD OF LIGHT-SHIELDING MASK AND LIGHT-SHIELDING MASK, PRODUCTION METHOD OF NEUTRAL DENSITY FILTER AND NEUTRAL DENSITY FILTER, AND DRAWING METHOD CARRIED OUT IN THE PRODUCTION METHOD OF LIGHT-SHIELDING MASK

PRODUCTION METHOD OF LIGHT-SHIELDING MASK AND LIGHT-SHIELDING MASK, PRODUCTION METHOD OF NEUTRAL DENSITY FILTER AND NEUTRAL DENSITY FILTER, AND DRAWING METHOD CARRIED OUT IN THE PRODUCTION METHOD OF LIGHT-SHIELDING MASK

机译:遮光膜和遮光膜的制造方法,中密度滤光片和中密度滤光片的制造方法以及遮光膜的制造方法中执行的绘制方法

摘要

PROBLEM TO BE SOLVED: To more easily adjust a transmittance for light of a light-shielding film to a desired value.;SOLUTION: A drawing target substrate S1 is prepared, which is composed of a transparent substrate 10, a light-shielding film 11 formed on the transparent substrate 10, and a resist film 12 formed on the light-shielding film 11. Dots 12a having a dot density value corresponding to a desired transmittance for light of a light-shielding mask 1 are drawn on the resist film 12 with an electron beam B; the resist film 12 after dots are drawn is developed; the light-shielding film 11 is etched with an etching gas G by using the developed resist film 12 as an etching mask; and the remaining resist film 12 is removed.;COPYRIGHT: (C)2014,JPO&INPIT
机译:解决的问题:为了更容易地将遮光膜的光的透射率调节到期望值。解决方案:制备拉伸目标基板S1,其由透明基板10,遮光膜11组成。在透明基板10上形成有抗蚀剂膜12,并且在遮光膜11上形成有抗蚀剂膜12。在抗蚀剂膜12上,以如下方式在抗蚀剂膜12上画有点密度值对应于遮光掩模1的光的期望透射率的点12a。电子束B;在绘制点之后的抗蚀剂膜12被显影;将显影后的抗蚀剂膜12作为蚀刻掩模,用蚀刻气体G对遮光膜11进行蚀刻。并去除残留的抗蚀剂膜12。版权所有:(C)2014,JPO&INPIT

著录项

  • 公开/公告号JP2014071249A

    专利类型

  • 公开/公告日2014-04-21

    原文格式PDF

  • 申请/专利权人 FUJIFILM CORP;

    申请/专利号JP20120216710

  • 申请日2012-09-28

  • 分类号G03F1;G03F7/20;G02B5;G03B11;

  • 国家 JP

  • 入库时间 2022-08-21 16:17:11

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