A method of forming a metal-containing thin film by chemical phase growth

摘要

Especially atomic layer growth method (ALD) and chemical vapor phase growth method (CVD) formation method of the metal content thin film due to the chemical phase growth the way is offered. The said method becomes including the fact that at least one organic metal precusor is supplied to the baseplate, one said precusor structure corresponds to formula II at least. In formula, as for M as for Ru, Fe or Os and R C₁ C10 alkyls, as for X C₁ C10 alkyls, as for n 0, 1, 2, 3, 4 or 5 is. Furthermore, manufacturing method of the precusor of disclosure is offered to the bill.