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Method for manufacturing a surface-emitting lasers, surface emitting lasers, surface emitting laser array device, an optical scanning device and image forming apparatus

机译:制造表面发射激光器的方法,表面发射激光器,表面发射激光器阵列装置,光学扫描装置和图像形成装置

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable surface-emitting laser which is resistant to oxidation from the wall of an element isolation trench.;SOLUTION: A method of manufacturing the surface-emitting laser includes: a semiconductor layer formation process of forming, by epitaxial growth, a lower reflecting mirror formed by alternately laminating semiconductor films having different refractive indices, an active layer made of a semiconductor film, a current constriction layer made of a semiconductor film, and an upper reflecting mirror formed by alternately laminating semiconductor films having different refractive indices on a surface of a semiconductor substrate; a mesa structure formation process of forming a mesa structure by etching a portion of the semiconductor films formed in the semiconductor layer formation process; an element isolation trench formation process of forming an element isolation trench by etching the semiconductor films formed in the semiconductor layer formation process to the surface of the semiconductor substrate; an insulator protection film formation process of forming an insulator protection film made of an insulator on the wall of the element isolation trench; and a metal film formation process of forming a metal protection film made of a metal material on the insulator protection film.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种高度可靠的表面发射激光器,该激光器能够抵抗元件隔离沟槽壁的氧化。解决方案:制造该表面发射激光器的方法包括:形成半导体层的工艺,通过外延生长,通过交替层叠具有不同折射率的半导体膜形成的下部反射镜,由半导体膜制成的有源层,由半导体膜制成的电流限制层以及通过交替层叠具有以下结构的半导体膜形成的上部反射镜:半导体衬底表面上的不同折射率;台面结构形成工艺,其通过蚀刻在半导体层形成工艺中形成的一部分半导体膜来形成台面结构。元件隔离沟槽形成工艺,其通过将在半导体层形成工艺中形成的半导体膜蚀刻到半导体衬底的表面而形成元件隔离沟槽;绝缘体保护膜形成工艺,在元件隔离沟槽的壁上形成由绝缘体制成的绝缘体保护膜。 ;在绝缘子保护膜上形成由金属材料制成的金属保护膜的金属膜形成工艺。;版权所有:(C)2011,日本特许厅

著录项

  • 公开/公告号JP5531584B2

    专利类型

  • 公开/公告日2014-06-25

    原文格式PDF

  • 申请/专利权人 株式会社リコー;

    申请/专利号JP20090270493

  • 发明设计人 庄子 浩義;佐藤 俊一;鈴土 剛;

    申请日2009-11-27

  • 分类号H01S5/183;

  • 国家 JP

  • 入库时间 2022-08-21 16:15:04

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