Being the system which offers the mass production of the mass

摘要

The present invention, III-group -N (nitrogen) compound semiconductor wafer, and more particularly to an optimized method and apparatus to produce a GaN wafer. The specific method of the present invention relates to substantially prevent that the formation of unwanted materials to the surface of the chemical vapor deposition (CVD) in the reactor isolation valve fixture (isolation valve fixture). The present invention, in a reaction chamber, a single crystal Group III-V semiconductor material by a certain amount of gas Group III precursor as one reactant, is reacted with gaseous Group V component of a quantity of the other reactants apparatus and method for limiting the GaCl ₃ and deposition / condensation reaction by-products to the system and the surface of the separation valve used in the process of forming the providing.