The plasma oh singing method and the plasma oh being formed

摘要

PROBLEM TO BE SOLVED: To provide a plasma ashing method and a plasma ashing apparatus capable of promptly removing resist residue while preventing fault occurrence due to the resist residue by applying a plasma ashing process to an ion-implanted resist.;SOLUTION: A method for plasma ashing of a resist pattern formed on a semiconductor substrate 109 and ion-implanted disposes the semiconductor substrate 109 in a same chamber 101 and continuously performs a low-temperature resist pattern ashing process that uses a plasma of mixture gas consisting mainly of oxygen and steam, a high-temperature resist pattern ashing process that uses a plasma of mixture gas consisting mainly of oxygen and steam, and a high-temperature resist pattern ashing process that uses a plasma of mixture gas consisting mainly of oxygen, steam, and fluorine-containing gas.;COPYRIGHT: (C)2012,JPO&INPIT