Either the hydrion,

摘要

PROBLEM TO BE SOLVED: To provide a bonding SOI wafer manufacturing method with less defect density in an epitaxial layer in the case where epitaxial growth is performed on a surface of an SOI layer of a bonded wafer manufactured by using an ion implantation peeling method.;SOLUTION: A bonded SOI wafer manufacturing method comprises: performing, as combined heat treatment, heat treatment at a temperature of 1000°C and over in an inert gas atmosphere containing oxygen of 5% and under after performing oxidation heat treatment for forming an oxide film on a surface of an SOI layer at a temperature less than 950°C; performing planarization processing associated with reduction in thickness of the SOI layer after removing the oxide film; and subsequently performing epitaxial growth on the surface of the SOI layer on which the planarization processing is performed.;COPYRIGHT: (C)2012,JPO&INPIT