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摘要

PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal ingot capable of producing a silicon carbide single crystal ingot which is excellent in a wafer production yield and has high quality, in a method for producing a silicon carbide single crystal ingot in which the silicon carbide single crystal ingot is grown and produced by a sublimation recrystallization method using a seed crystal, that is, an improved Rayleigh method, and to provide a silicon carbide single crystal ingot which is excellent in a wafer production yield and has high quality by this production method.;SOLUTION: There is provided a method for producing a silicon carbide single crystal ingot in which the silicon carbide single crystal ingot is grown by a sublimation recrystallization method using a seed crystal, wherein the method includes control of moving one or more of a heating member and an insulating member arranged around a crucible relatively to the position of the seed crystal in the right angle direction of the crystal growth surface of the seed crystal during the growth of the crystal. There is also provided a silicon carbide single crystal ingot obtained by using the method.;COPYRIGHT: (C)2012,JPO&INPIT