The compound oxide film and its production manner, the dielectricity material and the piezoelectric material which include the compound oxide film, the process which forms the compound oxide film in

摘要

The invention provides a complex oxide film having a high crystallinity, produced by forming the complex oxide film on a substrate surface and then calcining the complex oxide film in atmospheric gas under oxygen partial pressure of 1x10-3 Pa or less at 400° C. or more and a production method thereof. Further, the invention provides a dielectric or piezoelectric material containing the complex oxide film, a capacitor and a piezoelectric element using the material, and an electronic device comprising the element.