首页> 外国专利> BACKSIDE NANOSCALE TEXTURING TO IMPROVE IR RESPONSE OF SILICON SOLAR CELLS AND PHOTODETECTORS

BACKSIDE NANOSCALE TEXTURING TO IMPROVE IR RESPONSE OF SILICON SOLAR CELLS AND PHOTODETECTORS

机译:背面纳米纹理改善硅太阳能电池和光电检测器的红外响应

摘要

The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is prohibitive. The present invention relates to the use of less expensive microcrystalline silicon solar cells and the use of backside texturing with diffusive scattering to give a very large increase in the absorption of infrared light. Backside texturing with diffusive scattering and with a smooth front surface of the solar cell results in multiple internal reflections, light trapping, and a large enhancement of the absorption of infrared solar energy.
机译:硅对红外光的吸收系数非常低,大多数太阳能电池在日光下吸收的红外光能量很少。可以使用非常厚的晶体硅电池来增加对红外光能量的吸收,但是厚晶体电池的成本令人望而却步。本发明涉及使用较便宜的微晶硅太阳能电池以及使用具有漫射散射的背面纹理化以大大增加红外光的吸收。具有扩散散射的背面纹理以及太阳能电池的光滑前表面会导致多次内部反射,光陷获以及对红外太阳能吸收的极大增强。

著录项

  • 公开/公告号US2014306307A1

    专利类型

  • 公开/公告日2014-10-16

    原文格式PDF

  • 申请/专利权人 LEONARD FORBES;

    申请/专利号US201414174746

  • 发明设计人 LEONARD FORBES;

    申请日2014-02-06

  • 分类号H01L31/0232;H01L31/052;

  • 国家 US

  • 入库时间 2022-08-21 16:10:01

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