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Diode-triggered silicon controlled rectifier with an integrated diode
Diode-triggered silicon controlled rectifier with an integrated diode
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机译:带集成二极管的二极管触发可控硅整流器
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摘要
Device structures, design structures, and fabrication methods for a silicon controlled rectifier. A well of a first conductivity type is formed in a device region, which may be defined from a device layer of a semiconductor-on-insulator substrate. A doped region of a second conductivity type is formed in the well. A cathode of a silicon controlled rectifier and a cathode of a diode are formed in the device region. The silicon controlled rectifier comprises a first portion of the well and an anode comprised of a first portion of the doped region. The diode comprises a second portion of the well and an anode comprised of a second portion of the doped region.
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