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Systems and methods for improving error distributions in multi-level cell memory systems

机译:用于改善多级单元存储系统中的错误分布的系统和方法

摘要

A state set module arranges states of a memory cell in a first and a second sequence in a first and a second state set, respectively. The memory cell stores first and second bits when programmed to a state. When the states in the first and second state sets are accessed respectively in the first and the second sequence, the first and second bits of the states in the first and second state sets exhibit different number of logical transitions. A write module receives first and second sets of bits to be written as the first and second bits in a plurality of memory cells, and selects states from the first and second state sets in an alternating pattern to write the first and second sets of bits as the first and second bits in the plurality of memory cells.
机译:状态集模块分别以第一和第二状态集的第一和第二顺序排列存储单元的状态。当被编程为状态时,该存储单元存储第一和第二位。当分别在第一和第二序列中访问第一和第二状态集中的状态时,第一和第二状态集中的状态的第一和第二位表现出不同数量的逻辑转换。写模块接收要被写为多个存储单元中的第一和第二位的第一和第二位组,并以交替的模式从第一和第二状态组中选择状态以将第一和第二位组写为多个存储单元中的第一和第二位。

著录项

  • 公开/公告号US8699269B1

    专利类型

  • 公开/公告日2014-04-15

    原文格式PDF

  • 申请/专利权人 MARVELL INTERNATIONAL LTD.;

    申请/专利号US201313951766

  • 发明设计人 XUESHI YANG;

    申请日2013-07-26

  • 分类号G11C11/34;

  • 国家 US

  • 入库时间 2022-08-21 16:02:42

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