首页> 外国专利> Method of manufacturing multilayered thin film through phase separation of blend of organic semiconductor/insulating polymer and organic thin film transistor using the same

Method of manufacturing multilayered thin film through phase separation of blend of organic semiconductor/insulating polymer and organic thin film transistor using the same

机译:通过将有机半导体/绝缘聚合物的混合物与使用该混合物的有机薄膜晶体管进行相分离来制造多层薄膜的方法

摘要

Disclosed is a method of manufacturing a multilayered thin film including a crystalline small molecular organic semiconductor layer and an insulating polymer layer for use in an organic thin film transistor through phase separation and annealing. The method includes applying a blend solution of organic semiconductor and insulating polymer on a substrate thus forming a vertically phase-separated thin film, which is then annealed so that the organic semiconductor contained in the insulating polymer layer is crystallized while being transferred to the surface layer. A high-performance organic thin film transistor fabricated using the same is also provided. The multilayered thin film in which the crystalline organic semiconductor layer is located on the insulating polymer layer through transfer and crystallization of the organic semiconductor can be used to fabricate the high-performance organic thin film transistor.
机译:公开了一种通过相分离和退火来制造用于有机薄膜晶体管的包括晶体小分子有机半导体层和绝缘聚合物层的多层薄膜的方法。该方法包括在基板上施加有机半导体和绝缘聚合物的混合溶液,从而形成垂直相分离的薄膜,然后对其进行退火,使得绝缘聚合物层中包含的有机半导体在转移到表面层时结晶。 。还提供了使用其制造的高性能有机薄膜晶体管。结晶有机半导体层通过有机半导体的转移和结晶而位于绝缘聚合物层上的多层薄膜可以用于制造高性能有机薄膜晶体管。

著录项

  • 公开/公告号US8828793B2

    专利类型

  • 公开/公告日2014-09-09

    原文格式PDF

  • 申请/专利权人 KIL WON CHO;WI HYOUNG LEE;

    申请/专利号US200913140740

  • 发明设计人 KIL WON CHO;WI HYOUNG LEE;

    申请日2009-04-16

  • 分类号H01L51/40;H01L51/00;H01L51/05;

  • 国家 US

  • 入库时间 2022-08-21 16:01:51

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