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Method of forming a chalcogenide material and methods of forming a resistive random access memory device including a chalcogenide material
Method of forming a chalcogenide material and methods of forming a resistive random access memory device including a chalcogenide material
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机译:形成硫属化物材料的方法和形成包括硫属化物材料的电阻式随机存取存储装置的方法
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摘要
A method of forming a chalcogenide material on a surface of a substrate comprising exposing a surface of a substrate to ionized gas clusters from a source gas, the ionized gas clusters comprising at least one chalcogen and at least one electropositive element. A method of forming a resistive random access memory device is also disclosed. The method comprises forming a plurality of memory cells wherein each cell of the plurality of memory cells is formed by forming a metal on a first electrode, forming a chalcogenide material on the metal by a gas cluster ion beam process, and forming a second electrode on the chalcogenide material. A method of forming another resistive random access memory device and a random access memory device including the chalcogenide material are also disclosed.
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