This invention relates to a T-type three-level inverter circuit. The circuit includes an absorption unit. In the absorption unit, a first terminal of the first resistor is connected to a positive bus terminal, and a second terminal of the first resistor is connected to a first terminal of the first capacitor and a negative electrode of the first diode; a second terminal of the first capacitor and an positive electrode of the first diode are respectively connected to an emitter and a collector of the first controllable switch tube; a first terminal of the second resistor is connected to a negative bus terminal, and a second terminal of the second resistor is connected to a positive electrode of a third diode; a negative electrode of the third diode is connected to both a first terminal of the second capacitor and a positive electrode of a second diode; and a second terminal of the second capacitor and a negative electrode of the second diode are respectively connected to a collector and a emitter of the second controllable switch tube. As the T-type three-level inverter circuit according to the invention is implemented, a voltage stress on the bidirectional switch tube is effectively reduced due to strong absorption capacity of the absorption unit, and thus the bidirectional switch tube can adopt a tube having a relatively low breakdown voltage value. Moreover, the absorption unit has a low cost and a small loss.
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