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Butler type oscillator with restricted load of electromechanical resonator

机译:机电谐振器负载受限的巴特勒型振荡器

摘要

In the present invention, there is disclosed an oscillator comprised of two amplification stages with a first field-effect transistor (Q1) in connection with a common gate and a second field-effect transistor (Q2) in connection with a common drain. A load impedance (Z) is connected between the first field-effect transistor (Q1) drain and a supply voltage bus (ViDD). A second resistor (R2) is connected between the second field-effect transistor (Q2) drain and the supply voltage bus (ViDD). Said first field-effect transistor (Q1) drain is connected to one end of a first capacitor (C1) having its other end connected to both the gate of the second field-effect transistor (Q2) and to the joint of a fourth resistor (R4) and a fifth resistor (R5). The other end of the fourth resistor (R4) is connected to a common conductor or a source of the second field-effect transistor (Q2). The other end of the fifth resistor (R5) is connected to the gate of the first field-effect transistor (Q1) being at the same time connected to one end of a second capacitor (C2). Said second capacitor (C2) other end is connected to the common conductor. The source of the first field-effect transistor (Q1) is connected to one end of a third resistor (R3) and to one end of an electromechanical resonator (X1) having its other end connected to the source of the second field-effect transistor (Q2) being connected to one end of the first resistor (R1). The second end of the third resistor (R3) and that one of the first resistor (R1) are connected to the common conductor. One end of the third capacitor (C3) is connected between the drain of the second field-effect transistor (Q2) and an output voltage live terminal (Viout).
机译:在本发明中,公开了一种振荡器,该振荡器包括两个放大级,其具有与公共栅极连接的第一场效应晶体管(Q1)和与公共漏极连接的第二场效应晶体管(Q2)。负载阻抗(Z)连接在第一场效应晶体管(Q1)的漏极和电源电压总线(ViDD)之间。第二电阻器(R2)连接在第二场效应晶体管(Q2)漏极和电源电压总线(ViDD)之间。所述第一场效应晶体管(Q1)的漏极连接到第一电容器(C1)的一端,另一端连接到第二场效应晶体管(Q2)的栅极和第四电阻( R4)和第五电阻(R5)。第四电阻器(R4)的另一端连接到第二场效应晶体管(Q2)的公共导体或源极。第五电阻器(R5)的另一端连接到第一场效应晶体管(Q1)的栅极,该栅极同时连接到第二电容器(C2)的一端。所述第二电容器(C2)的另一端连接到公共导体。第一场效应晶体管(Q1)的源极连接到第三电阻器(R3)的一端,并且其另一端连接到第二场效应晶体管的源极的机电谐振器(X1)的一端连接。 (Q2)连接到第一电阻器(R1)的一端。第三电阻器(R3)的第二端和第一电阻器(R1)中的一个连接到公共导体。第三电容器(C3)的一端连接在第二场效应晶体管(Q2)的漏极与输出电压带电端子(Viout)之间。

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