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CONSTANT-WEIGHT-CODE-BASED ADDRESSING OF NANOSCALE AND MIXED MICROSCALE/NANOSCALE ARRAYS

机译:基于恒定权重码的纳米尺度和混合的微观尺度/纳米尺度阵列的地址

摘要

Various embodiments of the present invention include methods for determining nanowire addressing schemes and include microscale/nanoscale electronic devices that incorporate the nanowire addressing schemes for reliably addressing nanowire-junctions within nanowire crossbars (1700). The addressing schemes allow for change in the resistance state, or other physical or electronic state, of a selected nanowire-crossbar junction without changing the resistance state, or other physical or electronic state, of the remaining nanowire-crosbar junctions, and without destruction of either the selected nanowire-crossbar junction or the remaining, non-selected nanowire-crossbar junctions. Additional embodiments of the present invention included nanoscale memory arrays (1700) and other nanoscale electronic devices that incorporate the nanowire-addressing-scheme embodiments of the present invention. Certain of the embodiments of the present invention employ constant-weight codes (1308), a well-known class or error-control-encoding codes, as addressed-nanowire selection voltages applied to microscale output signal lines (1316-1319) of microscale/nanoscale encoder-demultiplexers that are selectively interconnected with a set of nanowires (1310-1315).
机译:本发明的各种实施例包括用于确定纳米线寻址方案的方法,并且包括并入了纳米线寻址方案的微米级/纳米级电子设备,用于可靠地寻址纳米线交叉开关(1700)内的纳米线结。寻址方案允许改变选定的纳米线-交叉开关结的电阻状态或其他物理或电子状态,而不会改变其余纳米线-交叉开关结的电阻状态或其他物理或电子状态,并且不会破坏选定的纳米线交叉开关结或其余未选定的纳米线交叉开关结。本发明的另外的实施例包括纳米级存储器阵列(1700)和结合了本发明的纳米线寻址方案实施例的其他纳米级电子设备。本发明的某些实施例采用恒定权重代码(1308),众所周知的类别或错误控制编码代码,作为施加到微米级/微米级的微米级输出信号线(1316-1319)的寻址纳米线选择电压。与一组纳米线选择性互连的纳米级编码器多路分解器(1310-1315)。

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