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EFFICIENT BLACK SILICON PHOTOVOLTAIC DEVICES WITH ENHANCED BLUE RESPONSE

机译:具有增强的蓝色响应的高效黑色硅光伏器件

摘要

A photovoltaic (PV) device with improved blue response. The PV device includes a silicon substrate with an emitter layer on a light receiving side. The emitter layer has a low opant level such that it has sheet resistance of 90 to 170 ohm/sq. Anti-reflection in the PV device is provided solely by a nano-structured or black silicon surface on the light-receiving surface, through which the emitter is formed by diffusion. The nano structures of the black silicon are formed in a manner that does not result in gold or another high-recombination metal being left in the black silicon such as with metal-assisted etching using silver. The black silicon is further processed to widen these pores so as to provide larger nanostructures with lateral dimensions in the range of 65 to 150 nanometers so as to reduce surface area and also to etch away a highly doped portion of the emitter.
机译:具有改善的蓝色响应的光伏(PV)设备。该PV器件包括在光接收侧具有发射极层的硅基板。发射极层具有低的不发光电平,因此其薄层电阻为90至170 ohm / sq。 PV器件中的抗反射仅由光接收表面上的纳米结构或黑色硅表面提供,通过扩散可以形成发射器。黑硅的纳米结构以不导致金或其他高结合金属留在黑硅中的方式形成,例如使用银的金属辅助蚀刻。黑硅被进一步处理以加宽这些孔,以便提供横向尺寸在65至150纳米范围内的较大的纳米结构,从而减小表面积并蚀刻掉发射极的高掺杂部分。

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