首页> 外国专利> MULTI-LAYER MASK INCLUDING NON-PHOTODEFINABLE LASER ENERGY ABSORBING LAYER FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH

MULTI-LAYER MASK INCLUDING NON-PHOTODEFINABLE LASER ENERGY ABSORBING LAYER FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH

机译:多层掩膜,包括不可分割的激光能量吸收层,用于通过激光和等离子刻蚀进行基质切割

摘要

Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a laser energy absorbing, non-photodefinable topcoat disposed over a water-soluble base layer disposed over the semiconductor substrate. Because the laser light absorbing material layer is non-photodefinable, material costs associated with conventional photo resist formulations may be avoided. The mask is direct-write patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. Absorption of the mask layer within the laser emission band (e.g., UV band and/or green band) promotes good scribe line quality. The substrate may then be plasma etched through the gaps in the patterned mask to singulate the IC with the mask protecting the ICs during the plasma etch. The soluble base layer of the mask may then be dissolved subsequent to singulation, facilitating removal of the layer.
机译:切割具有多个IC的基板的方法。一种方法包括形成多层掩模,该多层掩模包括设置在设置在半导体衬底上方的水溶性基础层上方的吸收激光能量的不可光定义的面涂层。因为激光吸收材料层是不可光定义的,所以可以避免与常规光致抗蚀剂配方相关的材料成本。使用激光划片工艺对掩模进行直接写入图案化,以提供具有间隙的图案化掩模。图案暴露IC之间的衬底区域。掩模层在激光发射带(例如,UV带和/或绿带)内的吸收促进了良好的划线质量。然后可以通过图案化掩模中的间隙对衬底进行等离子体蚀刻,以在等离子体蚀刻期间通过保护IC的掩模将IC单个化。然后可以在分割之后溶解掩模的可溶基础层,以促进该层的去除。

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