METHOD AND SYSTEM FOR MODIFYING SUBSTRATE PATTERNED FEATURES USING ION IMPLANTION

摘要

in the treatment of the features is the resist, the process chamber 302, a first side of the substrate (side ) create a plasma (306) having an adjacent plasma sheath (sheath) (308b) for positioning a substrate 112 having the patterned resist the features (114a) in the phase and a first side of a substrate in a process chamber includes the steps: Method so that is not parallel to the surface formed by the front (front surface) of the portion of the shape of the boundary is opposite to the plasma (facing) substrate 112, a plasma sheath can be regular (modifier) (312) using a plasma (306 ) and the plasma sheath (308b) further comprising the step of modifying the line between, and a first exposure (exposure) ions from the plasma 310, the patterned resist features while portions where (114a) in the wide-angle ( The wide angular) conflicts with the scope (impinge). ;